PHN405 Datasheet, PDF (7/12 Pages) NXP Semiconductors – 4 N-channel 60 mohm FET array enhancement mode MOS transistors

Philips Semiconductors
4 N-channel 60 mΩ FET array
enhancement mode MOS transistors
Product specification
PHN405
10
handbook, halfpage
VGS
(V)
8
MDA799
6
4
2
0
0
2
4
6
8
QG (nC)
V_DD = 15 V; I_D = 1 A; T_amb = 25 °C.
Fig.6 Gate-source voltage as a function of total
gate charge; typical values.
20
handbook, halfpage
ID
(A)
(1) (2) (3)
16
MDA807
12
(4)
8
(5)
4
0
0
2
4
T_amb = 25 °C; t_p = 80 µs; δ = 0.
(1) V_GS = 10 V.
(2) V_GS = 7.5 V.
(3) V_GS = 6 V.
(4) V_GS = 5 V.
(6)
(7)
(8)
6
8
10
VDS (V)
(5) V_GS = 4.5 V.
(6) V_GS = 4 V.
(7) V_GS = 3.5 V.
(8) V_GS = 3 V.
Fig.7 Output characteristics; typical values.
16
handbook, halfpage
ID
(A)
12
8
4
0
0
2
MDA798
4
6
VGS (V)
V_DS = 10 V; T_amb = 25 °C; t_p = 80 µs; δ = 0.
Fig.8 Transfer characteristic; typical values.
1998 Mar 17
500
handbook, halfpage
C
(pF)
400
MDA806
300
Ciss
200
Coss
100
Crss
0
0
5
10
15
20
25
VDS (V)
V_GS = 0 ; f = 1 MHz; T_j = 25 °C.
Fig.9 Capacitance as a function of drain-source
voltage; typical values.
7