BUK7215-55A Datasheet, PDF (8/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7215-55A
TrenchMOS™ standard level FET
100
ID
(A)
80
60
03na31
10
VGS
(V)
8
6
VDD = 14 V
03na33
VDD = 44 V
40
4
20
0
0
Tj = 175 ºC
2
4
Tj = 25 ºC
6
8
10
VGS (V)
2
0
0
20
40 _{QG (nC)} 60
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
80
03na32
60
40
20
0
0.0
Tj = 175 ºC
0.5
Tj = 25 ºC
1.0
1.5
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08632
Product data
Rev. 01 — 16 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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