BUK7215-55A Datasheet, PDF (3/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7215-55A
TrenchMOS™ standard level FET
120
P_der
(%)
100
80
60
40
20
0
0
50
100
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
03aa16
150
200
Tmb (ºC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
80
03nf79
ID
(A)
Capped at 55 A due to limitation of bondwires
60
40
20
0
25 50 75 100 125 150 175 200
Tmb (ºC)
V_GS ≥ 4.5 V
I_der
=
--------^I--^D---------
I
×
100%
D ( 25 ^°C )
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
102
RDSon = VDS / ID
03nf78
tp = 10 µs
100 µs
10
P
δ
=
tp
T
tp
t
T
1
1
DC
10
VDS (V)
1 ms
10 ms
100 ms
102
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08632
Product data
Rev. 01 — 16 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
3 of 12