BUK7215-55A Datasheet, PDF (7/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7215-55A
TrenchMOS™ standard level FET
5
V_GS(th)
(V)
4
3
max
typ
03aa32
10-1
I_D
(A)
10-2
10-3
03aa35
min
typ
max
2
min
10-4
1
10-5
0
-60
0
60
120 _{Tj (oC)} 180
10-6
0
1
2
3
4
5
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
30
gfs
(S)
20
03na35
10
0
0
20
40
60
80
100
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
3000
C
(pF)
2500
2000
03na38
Ciss
1500
1000
Coss
500
0
10-2
10-1
Crss
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08632
Product data
Rev. 01 — 16 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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