BUK7215-55A Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
V_SD
source-drain (diode forward)
voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V;
Figure 15
I_S = 20 A; dI_S/dt = −100 A/µs
V_GS = −10 V; V_DS = 30 V
BUK7215-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
−
0.85
1.2
V
−
48
−
ns
−
106
−
nC
250
ID
(A)
200
150
100
50
0
0
VGS (V) = 20
03na36
10
9
8
7
6
5
2
4
6
8
10
VDS (V)
16
RDSon
(mΩ)
14
03nf80
12
10
8
10
12
14
16
18
20
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
35
03na37
2
RDSon
(mΩ)
a
30 ^{VGS (V) = 6 6.5 7}
8
9 10
1.5
25
1
20
0.5
15
03ne89
10
0
50
100
150
200
ID (A)
0
-60
0
60
120
180
Tj (ºC)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 08632
Product data
Rev. 01 — 16 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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