BUK7215-55A Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS
V_GS(th)
drain-source breakdown
voltage
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 25 A;
Figure 7 and 8
Dynamic characteristics
T_j = 25 °C
T_j = 175 °C
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_d
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
V_GS = 10 V; V_DD = 44 V;
I_D = 25 A; Figure 14
V_GS = 0 V; V_DS = 25 V;
f = 1 MHz; Figure 12
V_DD = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω;
measured from drain to
centre of die
L_s
internal source inductance measured from source lead
to source bond pad
BUK7215-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
55
−
−
V
50
−
−
V
2
3
4
V
1
−
−
V
−
−
4.4
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
−
13
15
mΩ
−
−
30
mΩ
−
50
−
nC
−
9
−
nC
−
19
−
nC
−
1580
2107
pF
−
370
446
pF
−
220
300
pF
−
26
−
ns
−
99
−
ns
−
73
−
ns
−
65
−
ns
−
2.5
−
nH
−
7.5
−
nH
9397 750 08632
Product data
Rev. 01 — 16 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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