BUK7107-55AIE_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7107-55AIE
N-channel TrenchPLUS standard level FET
400
ID ¹²
(A)
20
300
10
8.5
200
100
0
0
2
4
03ni65
8
VGS (V) = 7.5
7
6.5
6
5.5
4
4.5
6
8
10
VDS (V)
8
RDSon
(mΩ)
7
6
5
4
5
03ni66
10
15
20
VGS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2
12
RDSon
03ni67
a
(mΩ)
10
VGS (V) = 5.5
1.5
6
6.5
8
7
8
1
6
10
03ne89
4
0.5
2
0
0
20
40
60
80 100 120
ID (A)
0
-60
0
60
120
180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7107-55AIE_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
8 of 14