BUK7107-55AIE_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7107-55AIE
N-channel TrenchPLUS standard level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
160
03ni63
ID
(A)
120
80
Capped at 75A due to package
40
0
0
50
100
150
200
Tmb (°C)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
DC
10
03nf55
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7107-55AIE_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
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