BUK7107-55AIE_15 Datasheet, PDF (10/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7107-55AIE
N-channel TrenchPLUS standard level FET
120
ID
(A)
100
80
60
40
20
0
0
03ni70
175 °C
Tj = 25 °C
2
4 _{VGS (V)} 6
10
VGS
(V)
8
6
4
2
0
0
03nf25
VDS = 14 V
VDS = 44 V
40
80 _{QG (nC)} 120
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
600
ID/Isense
550
03nj27
100
IS
(A)
80
03ni72
500
450
400
4
8
12
16
20
VGS (V)
Fig 15. Drain-sense current as a function of
gate-source voltage; typical values
60
40
175 °C
20
Tj = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
Fig 16. Reverse diode current as a function of reverse
diode voltage; typical values
BUK7107-55AIE_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
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