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BUK7107-55AIE_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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BUK7107-55AIE
N-channel TrenchPLUS standard level FET
Rev. 02 â 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Electrostatically robust due to
integrated protection diodes
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Reduced component count due to
integrated current sensor
 Suitable for standard level gate drive
sources
1.3 Applications
 Electrical Power Assisted Steering
(EPAS)
 Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
-
-
55 V
ID
drain current
VGS = 10 V; Tmb = 25 °C; [1] -
-
140 A
see Figure 2; see Figure 3
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7;
see Figure 8
-
5.8 7
mâ¦
ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C;
to sense current
VGS > 10 V
450 500 550
[1] Current is limited by power dissipation chip rating.
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