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| BUK7107-55AIE_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7107-55AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics â¦continued
Symbol Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
80
-
ns
-
200 -
nC
BUK7107-55AIE_2
Product data sheet
Rev. 02 â 10 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 14
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