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BUK7107-55AIE_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET
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NXP Semiconductors
BUK7107-55AIE
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
IDSS
V(BR)GSS
IGSS
RDSon
drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
gate-source breakdown IG = 1 mA; VDS = 0 V; Tj < 175 °C;
voltage
Tj > -55 °C
IG = -1 mA; VDS = 0 V; Tj < 175 °C;
Tj > -55 °C
gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C
VDS = 0 V; VGS = -10 V; Tj = 25 °C
VDS = 0 V; VGS = 10 V; Tj = 175 °C
VDS = 0 V; VGS = -10 V; Tj = 175 °C
drain-source on-state VGS = 10 V; ID = 50 A; Tj = 25 °C;
resistance
see Figure 7; see Figure 8
VGS = 10 V; ID = 50 A; Tj = 175 °C;
see Figure 7; see Figure 8
ID/Isense
ratio of drain current to VGS > 10 V; Tj > -55 °C; Tj < 175 °C
sense current
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
ID = 25 A; VDS = 44 V; VGS = 10 V;
Tj = 25 °C; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
td(on)
tr
td(off)
tf
LD
LS
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
from upper edge of drain mounting base to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
BUK7107-55AIE_2
Product data sheet
Rev. 02 — 10 February 2009
Min Typ Max Unit
55
-
-
V
50
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.1 10
µA
-
-
250 µA
20
22
-
V
20
22
-
V
-
22
1000 nA
-
22
1000 nA
-
-
10
µA
-
-
10
µA
-
5.8 7
mΩ
-
-
14
mΩ
450 500 550
-
116 -
nC
-
19
-
nC
-
50
-
nC
-
4500 -
pF
-
960 -
pF
-
510 -
pF
-
36
-
ns
-
115 -
ns
-
159 -
ns
-
111 -
ns
-
2.5 -
nH
-
7.5 -
nH
© NXP B.V. 2009. All rights reserved.
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