BUK6C3R3-75C_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6C3R3-75C
N-channel TrenchMOS intermediate level FET
10
VGS
(V)
8
VDS = 60V
003aaf937
6
4
2
0
0
100
200 _{QG (nC)} 300
T_j = 25 °C; I_D = 25 A
Fig 13. Gate-source voltage as a function of gate
charge; typical values
10⁵
C
(pF)
003aaf934
10⁴
Ciss
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 14. Gate charge waveform definitions
250
IS
(A)
200
150
003aaf938
100
10³
Coss
Crss
Tj = 175 °C
50
Tj = 25 °C
10²
10^-1
1
10
10²
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
0.3
0.6
0.9
1.2
VSD (V)
V_GS = 0 V
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK6C3R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 January 2012
© NXP B.V. 2012. All rights reserved.
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