BUK6C3R3-75C_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6C3R3-75C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
Pulsed
DC
I_D
drain current
I_DM
peak drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 120 A; V_sup < 75 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
[1] Accumulated pulse duration not to exceed 5mins.
[2] -16V accumulated duration not to exceed 168 hrs.
Min
-
[1] _-20
[2] _-16
-
-
-
Max Unit
75 V
20 V
16 V
181 A
128 A
723 A
-
300 W
-55 175 °C
-55 175 °C
-
181 A
-
723 A
-
560 mJ
200
ID
(A)
160
120
003aaf928
120
P_der
(%)
80
03na19
80
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK6C3R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 January 2012
© NXP B.V. 2012. All rights reserved.
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