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| BUK6C3R3-75C_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6C3R3-75C
N-channel TrenchMOS intermediate level FET
104
ID
(A)
103
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
DC
1
10
003a a f929
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
102
103
V DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
-
0.5 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
003aaf930
P
δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6C3R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 18 January 2012
© NXP B.V. 2012. All rights reserved.
4 of 13
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