BUK6C3R3-75C_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6C3R3-75C
N-channel TrenchMOS intermediate level FET
300
ID
(A)
240
VGS (V) =10.0
5.0
003aaf931
4.5
240
ID
(A)
180
003aaf932
180
120
60
0
0
0.5
1
T_j = 25 °C; t_p = 300 μs
4.0
3.8
3.6
3.4
1.5
2
VDS (V)
120
60
0
0
Tj = 175 °C
Tj = 25 °C
2
4
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
400
gfs
(S)
300
003aaf933
15
RDSon
(mΩ)
10
003aaf936
200
5
100
0
0
60
120
180
240
300
ID (A)
0
0
5
10
15
20
VGS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK6C3R3-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 January 2012
© NXP B.V. 2012. All rights reserved.
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