English
Language : 

PSMN130-200D_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
10−1
lD
(A)
10−2
014aab274
10−3
10−4
minimum
typical maximum
10−5
10−6
0
1
2
3
4
5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
12
VGS
(V)
8
4
014aab276
VDD = 40 V
VDD = 160 V
104
C
(pF)
103
102
014aab275
Ciss
Coss
Crss
10
10−1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
32
IF
(A)
24
014aab277
16
Tj = 175 °C
Tj = 25 °C
8
0
0
20
40
60
QG (nC)
Tj = 25 °C; ID = 20 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0
0
0.4
0.8
1.2
VSDS (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PSMN130-200D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 12