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| PSMN130-200D_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
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NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
VDS = 150 V; VGS = 0 V; Tj = 25 °C
VDS = 150 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
ID = 20 A; VDS = 160 V; VGS = 10 V;
Tj = 25 °C
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
VDS = 100 V; RL = 4.7 â¦; VGS = 10 V;
RG(ext) = 5.6 â¦; Tj = 25 °C
from tab to centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
178 -
-
V
200 -
-
V
-
-
6
V
2
3
4
V
1
-
-
V
-
0.05 10 µA
-
-
500 µA
-
0.02 100 nA
-
0.02 100 nA
-
-
377 mâ¦
-
120 130 mâ¦
-
65
-
nC
-
10
-
nC
-
22 -
nC
-
2470 -
pF
-
207 -
pF
-
90
-
pF
-
15
-
ns
-
46 -
ns
-
50
-
ns
-
38 -
ns
-
3.5 -
nH
-
7.5 -
nH
-
0.95 1.2 V
-
124 -
ns
-
0.74 -
µC
PSMN130-200D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 â 20 December 2010
© NXP B.V. 2010. All rights reserved.
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