English
Language : 

PSMN130-200D_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
◁
NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
102
IDM
(A)
RDS(on) = VDS / ID
10
D.C.
1
014aab266
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
lAS
(A)
10
014aab278
25 °C
Tj prior to avalanche = 150 °C
1
10−1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
10−1
10−3
10−2
10−1
1
10
tAV (ms)
unclamped inductive load
Fig 4. Single-shot avalanche rating; avalanche
current as a function of avalanche period
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
mounted on a printed-circuit board;
minimum footprint
Min Typ Max Unit
-
-
1
K/W
-
50
-
K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
10−1 0.1
0.05
0.02
10−2
single pulse
10−3
10−6
10−5
10−4
014aab267
P
tp
δ=
T
10−3
tp
t
T
10−2
10−1 1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN130-200D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 December 2010
© NXP B.V. 2010. All rights reserved.
4 of 12
 ▷