PSMN130-200D_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
20
l_D
(A)
16
12
V_GS (V) = 10
8
6
014aab268
5.4
5.2
5
8
4.8
4
4.6
4.4
0
0
0.4
0.8
1.2
1.6
2
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
0.3
4.4 4.6 4.8
R_DS(on)
(Ω)
5
0.2
5.2
0.1
014aab269
5.4 6
8
V_GS (V) = 10
0
0
4
6
8
16
20
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
20
I_D
(A)
16
12
014aab270
30
g_fs
(S)
20
T_j = 25 °C
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8
T_j = 175 °C
4
T_j = 25 °C
0
0
2
4
6
V_GS (V)
V_DS > I_D x R_DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T_j = 175 °C
10
0
0
4
8
12
16
20
I_D (A)
V_DS > I_D x R_DSon
Fig 9. Forward transconductance as a function of
drain current; typical values
2.9
a
2.1
1.3
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5
V_GS(th)
(V)
4
3
2
1
maximum
typical
minimum
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0.5
−60
20
100
180
T_j (°C)
0
−60
20
I_D = 1 mA; V_DS = V_GS
100
180
T_j (°C)
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN130-200D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 December 2010
© NXP B.V. 2010. All rights reserved.
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