PSMN130-200D_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 20 December 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
Parameter
drain-source
voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V
P_tot
total power
T_mb = 25 °C
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 20 A;
V_DS = 160 V; T_j = 25 °C
Min Typ Max Unit
-
-
200 V
-
-
20 A
-
-
150 W
-
120 130 mΩ
-
22 -
nC