PSMN070-200B_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
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minimum
typical
maximum
10^−6
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
16
V_GS
(V)
12
8
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V_DD = 40 V
V_DD = 160 V
10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
10
10^−1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
40
I_F
(A)
30
20
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Tj = 175 °C
Tj = 25 °C
4
10
0
0
20
40
60
80
100
Q_G (nC)
T_j = 25 °C; I_D = 35 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
0
0
0.4
0.8
1.2
V_SDS (V)
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
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