PSMN070-200B_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G
gate
D
drain^[1]
mb
S
source
D
mounting base; connected to drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN070-200B
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
T_mb = 100 °C
T_mb = 25 °C
pulsed; T_mb = 25 °C
T_mb = 25 °C
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; T_mb = 25 °C
E_DS(AL)S
I_AS
non-repetitive drain-source
avalanche energy
non-repetitive avalanche current
V_GS = 10 V; T_j(init) = 25 °C; I_D = 35 A;
V_sup ≤ 50 V; unclamped; t_p = 100 µs;
R_GS = 50 Ω
V_sup ≤ 50 V; V_GS = 10 V; T_j(init) = 25 °C;
R_GS = 50 Ω; unclamped
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
Min Max Unit
-
200 V
-
200 V
-20 20 V
-
25 A
-
35 A
-
140 A
-
250 W
-55 175 °C
-55 175 °C
-
35 A
-
140 A
-
462 mJ
-
35 A
© NXP B.V. 2010. All rights reserved.
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