PSMN070-200B_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
100
P_D
(%)
80
60
40
20
0
0
003aae564
50
100
150
200
T_mb (°C)
100
I_D
(%)
80
60
40
20
0
0
003aae565
50
100
150
200
T_mb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
10³
I_DM
(A)
10²
R_DS(on) = V_DS / I_D
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tp = 10 μs
100 μs
10
D.C.
1 ms
10 ms
100 ms
1
1
10
10²
10³
V_DS (V)
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
10²
I_AS
(A)
10
003aae579
25 °C
T_j prior to avalanche = 150 °C
1
10^−3
10^−2
10^−1
1
10
t_AV (ms)
unclamped inductive load
Fig 4. Single-shot avalanche rating; avalanche
current as a function of avalanche period
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
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