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PSMN070-200B_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
VDS = 200 V; VGS = 0 V; Tj = 175 °C
VDS = 200 V; VGS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 17 A; Tj = 175 °C
VGS = 10 V; ID = 17 A; Tj = 25 °C
QG(tot)
QGS
total gate charge
gate-source charge
ID = 35 A; VDS = 160 V; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 100 V; RL = 2.7 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
LD
internal drain inductance measured from tab to centre of die ;
Tj = 25 °C
LS
internal source inductance measured from source lead to source
bond pad ; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C
trr
reverse recovery time
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
200 -
-
V
178 -
-
V
1
-
-
V
2
3
4
V
-
-
6
V
-
-
500 µA
-
0.05 10 µA
-
2
100 nA
-
2
100 nA
-
-
203 mΩ
-
60
70
mΩ
-
77
-
nC
-
16
-
nC
-
28 -
nC
-
4570 -
pF
-
370 -
pF
-
160 -
pF
-
22
-
ns
-
100 -
ns
-
80
-
ns
-
90
-
ns
-
3.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
160 -
ns
-
1
-
µC
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
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