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PSMN070-200B_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Conditions
mounted on printed-circuit board ;
minimum footprint
Min Typ Max Unit
-
-
0.6 K/W
-
50
-
K/W
1
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
single pulse
10−3
10−6
10−5
10−4
003aae567
P
tp
δ=
T
10−3
tp
t
T
10−2
10−1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
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