PSMN070-200B_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
40
I_D
(A)
30
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V_GS = 10 V
8V
6V
5.2 V
5V
20
4.8 V
10
4.6 V
4.4 V
4.2 V
0
0
0.4
0.8
1.2
1.6
2.0
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
0.20
R_DS(on)
(Ω)
0.16
0.12
0.08
0.04
4.2 V
4.4 V
4.6 V
4.8 V
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5V
8V
5.2 V
6V
V_GS = 10 V
0
0
10
20
30
40
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
40
I_D
(A)
30
20
10
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T_j = 175 °C
T_j = 25 °C
50
g_fs
(S)
40
30
20
10
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T_j = 25 °C
T_j =175 °C
0
0
2
4
6
V_GS (V)
V_DS > I_D x R_DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
0
10
20
30
40
I_D (A)
V_DS > I_D x R_DSon
Fig 9. Forward transconductance as a function of
drain current; typical values
2.9
a
2.1
1.3
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4.5
V_GS(th)
(V)
3.5
2.5
1.5
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maximum
typical
minimum
0.5
−60
20
100
180
T_j (°C)
0.5
-60
20
I_D = 1 mA; V_DS = V_GS
100
180
T_j (°C)
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
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