PHU2N50E Datasheet, PDF (7/9 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
dV/dt (V/ns)
7
6.5
6
5.5
5
4.5
4
3.5
3
0.4
0.8
1
5
Ids (A)
Fig.19. Peak body recovery voltage dV/dt. The dV/dt
= f(I_DS). The dI/dt is 100A/µs.
Product specification
PHU2N50E
May 1999
7
Rev 1.000