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| PHU2N50E Datasheet, PDF (2/9 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated | |||
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHU2N50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 1.26 A;
tp = 0.2 ms; Tj prior to avalanche = 25ËC;
VDD ⤠50 V; RGS = 50 â¦; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 2 A; tp = 2.5 µs; Tj prior to
avalanche = 25ËC; RGS = 50 â¦; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
82
3.3
2
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
In free air
MIN. TYP. MAX. UNIT
-
- 2.5 K/W
- 70 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
âV(BR)DSS / Drain-source breakdown
âTj
voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 1 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 1 A
Drain-source leakage current VDS = 500 V; VGS = 0 V
VDS = 500 V; VGS = 0 V; Tj = 125 ËC
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 2 A; VDD = 400 V; VGS = 10 V
td(on)
Turn-on delay time
tr
Turn-on rise time
td(off)
Turn-off delay time
tf
Turn-off fall time
VDD = 250 V; RD = 120 â¦;
RG = 24 â¦
Ld
Internal drain inductance Measured from tab to centre of die
Ls
Internal source inductance Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
500 -
-
V
- 0.1 - %/K
-
3.1 5
â¦
2.0 3.0 4.0 V
0.5 1.3 -
S
-
1 25 µA
- 77 250 µA
- 10 200 nA
- 20 25 nC
-
2
3 nC
- 12 15 nC
- 10 - ns
- 20 - ns
- 60 - ns
- 20 - ns
- 3.5 - nH
- 7.5 - nH
- 236 - pF
- 40 - pF
- 22 - pF
1 pulse width and repetition rate limited by Tj max.
May 1999
2
Rev 1.000
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