PHU2N50E Datasheet, PDF (3/9 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current T_mb = 25˚C
(body diode)
I_SM
Pulsed source current (body T_mb = 25˚C
diode)
V_SD
Diode forward voltage
I_S = 2 A; V_GS = 0 V
t_rr
Reverse recovery time
I_S = 2 A; V_GS = 0 V; dI/dt = 100 A/µs
Q_rr
Reverse recovery charge
Product specification
PHU2N50E
MIN. TYP. MAX. UNIT
-
-
2
A
-
-
8
A
-
- 1.2 V
- 300 - ns
- 2.1 - µC
May 1999
3
Rev 1.000