BUK7C08-55AITE Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
400
ID
(A)
300 20
10
98
200
100
0
0
2
4
03nn97
Label is VGS (V)
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
14
RDSon
(mΩ)
12
10
8
6
4
4
03nn99
8
12
16 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nn98
20
2
R_DSon
(mΩ)
5.5
6.5
6
Label is VGS (V)
7
7.5 8
a
16
1.5
03ne89
12
1
10
8
20
0.5
4
0
100
200
T_j = 25 °C; t_p = 300 µs
300 _{ID (A)} 400
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11696
Product data
Rev. 01 — 19 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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