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BUK7C08-55AITE Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET
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Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
V(BR)GSS
IGSS
RDSon
drain-source leakage current
gate-source breakdown
voltage
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IG = ±1 mA;
−55 °C < Tj < +175 °C
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 50 A;
Figure 7 and 8
RD(Is)on
drain-Isense on-state
resistance
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 mA;
Figure 18
Tj = 25 °C
Tj = 175 °C
VF
forward voltage temperature IF = 250 µA
sense diode
SF
temperature coefficient
IF = 250 µA;
temperature sense diode
−55 °C < Tj < +175 °C
Vhys
forward voltage hysteresis 125 µA < IF < 250 µA
temperature sense diode
ID/Isense
ratio of drain current to sense VGS > 5 V;
current
−55 °C < Tj < +175 °C
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
VGS = 10 V; VDS = 44 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
9397 750 11696
Product data
Rev. 01 — 19 August 2003
Min
55
50
2
1
-
-
-
20
-
-
-
-
1.32
3.04
648
−1.4
25
450
-
-
-
-
-
-
Typ
Max
Unit
-
-
V
-
-
V
3
4
V
-
-
V
-
4.4
V
0.1
10
µA
-
250
µA
22
-
V
22
1 000
nA
-
10
µA
6.8
8
mΩ
-
16
mΩ
1.55
3.57
658
−1.54
32
500
1.82
4.19
668
−1.68
50
550
Ω
Ω
mV
mV/K
mV
-
116
-
nC
19
-
nC
51
-
nC
4 200
-
pF
920
-
pF
500
-
pF
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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