BUK7C08-55AITE Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
Table 4: Characteristics…continued
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
t_d(on)
t_r
turn-on delay time
rise time
V_DD = 30 V; R_L = 1.2 Ω;
-
V_GS = 10 V; R_G = 10 Ω
-
t_d(off)
turn-off delay time
-
t_f
fall time
-
L_d
internal drain inductance
measured from upper edge
-
of drain mounting base to
centre of die
L_s
internal source inductance measured from source lead
-
to source bond pad; lead
length 6 mm
Source-drain diode
V_SD
source-drain (diode forward) I_S = 40 A; V_GS = 0 V;
-
voltage
Figure 19
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
Typ
Max
Unit
35
-
nS
115
-
nS
155
-
nS
110
-
nS
2.5
-
nH
7.5
-
nH
0.85
1.2
V
80
-
ns
200
-
nC
9397 750 11696
Product data
Rev. 01 — 19 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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