BUK7C08-55AITE Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

BUK7C08-55AITE
TrenchPLUS standard level FET
M3D323
Rev. 01 — 19 August 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance and including
TrenchPLUS current sensing, and diodes for ESD and overtemperature protection.
Product availability:
BUK7C08-55AITE in SOT427 (D²-PAK).
1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines
s Automotive and power switching
s Electrical Power Assisted Steering
s Fan control.
1.4 Quick reference data
s V_DS ≤ 55 V
s I_D ≤ 130 A
s R_DSon = 6.8 mΩ (typ)
s V_F = 658 mV (typ)
s S_F = −1.54 mV/K (typ)
s I_D/I_sense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT427, simplified outline and symbol
Pin Description Pin Description Simplified outline
1
gate (g)
5
cathode (k)
2
I_sense
6
Kelvin source
mb
3
anode (a)
7
source (s)
4
drain (d)
mb mounting base;
connected to
drain (d)
1234567
Front view
MBK128
SOT427 (D²-PAK)
Symbol
d
a
g
MBL362
s
k
Isense
Kelvin source