BUK7C08-55AITE Datasheet, PDF (10/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
600
ID/Isense
550
03no04
8
RD(Is)on
(mΩ)
6
03no03
500
4
450
2
400
4
8
12
16 _{VGS (V)} 20
0
4
8
12
16 _{VGS (V)} 20
I_D = 25 A
Fig 17. Drain-sense current ratio as a function of gate
voltage; typical values.
I_sense = 25 mA
Fig 18. R_D(Is)on as function of gate-source voltage;
typical values.
100
03no02
ID
(A)
75
50
175 °C
25
Tj = 25 °C
0
0
0.5
1 _{VSD (V)} 1.5
V_GS = 0 V
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 11696
Product data
Rev. 01 — 19 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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