BUK7675-55A_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

NXP Semiconductors
10
V_GS
(V)
8
V_DD = 14 V
6
03nc05
V_DD = 44 V
4
2
0
0
5
10
15
Q_G (nC)
Fig. 9. Gate-source voltage as a function of gate
charge; typical values
BUK7675-55A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
0
- 60
0
60
120
180
T_j (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
180
R_DSon
(mΩ)
160
140
5.5 6 6.5 7
03nc10
8 V_GS (V) = 10
2.4
a
1.8
03aa28
120
1.2
100
80
0.6
60
40
0
10
20
30
40
50
I_D (A)
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
0
- 60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7675-55A
Product data sheet
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25 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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