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| BUK7675-55A_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7675-55A
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 175 °C;
resistance
Fig. 11; Fig. 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11; Fig. 12
Dynamic characteristics
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 13
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
LD
internal drain
from upper edge of drain mounting
inductance
base to centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
LS
internal source
from source lead to source bond pad;
inductance
Tj = 25 °C
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 14
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
2
100 nA
-
2
100 nA
-
-
150 mΩ
-
64
75
mΩ
-
320 483 pF
-
92
113 pF
-
64
90
pF
-
10
-
ns
-
50
-
ns
-
70
-
ns
-
40
-
ns
-
2.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
32
-
ns
-
120 -
nC
BUK7675-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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