BUK7675-55A_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7675-55A
N-channel TrenchMOS standard level FET
60
I_D
(A)
50
40
30
V_GS (V) = 16 14
03nc09
20
12
10.5
9.5
8.5
160
R_DSon
(mΩ)
140
120
100
03nc08
7.5
20
80
6.5
10
60
5.5
0
4.5
0
2
4
6
8
10
V_DS (V)
40
5
10
15
20
V_GS (V)
Fig. 5. Output characteristics; drain current as a
Fig. 6. Drain-source on-state risistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^{- 1}
I_D
(A)
10^{- 2}
03aa35
min typ max
25
I_D
(A)
20
03nc07
10^{- 3}
15
10^{- 4}
10
10^{- 5}
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
5
T_j = 175 °C
T_j = 25 °C
0
0
2
4
6
8
10
V_GS (V)
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK7675-55A
Product data sheet
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25 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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