BUK7675-55A_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7675-55A
N-channel TrenchMOS standard level FET
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 4
mounted on printed-circuit board;
minimum footprint
Min Typ Max Unit
-
-
2.4 K/W
-
50
-
K/W
10
03nc13
Z_th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10^{- 1 0.02}
P
δ = ^tp
T
single shot
10^{- 2}
10^{- 6}
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
t_p
t
T
10^{- 1}
1
t_p (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V_(BR)DSS
drain-source
breakdown voltage
I_D = 0.25 mA; V_GS = 0 V; T_j = 25 °C
I_D = 0.25 mA; V_GS = 0 V; T_j = -55 °C
V_GS(th)
gate-source threshold I_D = 1 mA; V_DS = V_GS; T_j = 175 °C;
voltage
Fig. 10
I_D = 1 mA; V_DS = V_GS; T_j = 25 °C;
Fig. 10
I_D = 1 mA; V_DS = V_GS; T_j = -55 °C;
Fig. 10
I_DSS
drain leakage current V_DS = 55 V; V_GS = 0 V; T_j = 175 °C
V_DS = 55 V; V_GS = 0 V; T_j = 25 °C
BUK7675-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 August 2014
Min Typ Max Unit
55
-
-
V
50
-
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
-
500 µA
-
0.05 10
µA
© NXP Semiconductors N.V. 2014. All rights reserved
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