BUK7675-55A_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

BUK7675-55A
N-channel TrenchMOS standard level FET
25 August 2014
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
• Suitable for standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V and 24 V loads
• Automotive and general purpose power switching
• Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 2; Fig. 3
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 10 A; T_j = 175 °C;
resistance
Fig. 11; Fig. 12
V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
Fig. 11; Fig. 12
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
I_D = 11 A; V_sup ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
55
V
-
-
20.3 A
-
-
62
W
-
-
150 mΩ
-
64
75
mΩ
-
-
30.3 mJ
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