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| BUK7675-55A_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7675-55A
N-channel TrenchMOS standard level FET
Symbol
Parameter
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
ID = 11 A; Vsup ⤠55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
120
Pder
(%)
80
03na19
120
Ider
(%)
80
Min Max Unit
-
20.3 A
-
81
A
-
30.3 mJ
03aa24
40
40
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
102
10
P
1
RDSon = VDS / ID
δ=
tp
T
D.C.
03nc12
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
tp
t
T
10- 1
1
10
102
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7675-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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