BUK7516-55A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
35
RDSon
(mΩ)
V_GS (V) = 6
30
6.5 7
03na37
8
9 10
25
20
15
10
0
50
100
150
200
ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
2.4
a
1.8
03aa28
3000
C
(pF)
2500
2000
03na38
C_iss
1.2
0.6
0
−60
0
60
120
180
T_j (°C)
1500
1000
500
0
10^−2
10^−1
C_oss
C_rss
1
10
10²
V_DS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
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