BUK7516-55A_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
vertical in still air
BUK7516-55A
N-channel TrenchMOS standard level FET
Min Typ Max Unit
-
-
1.1 K/W
-
60
-
K/W
10
Z_th(j-mb)
(K/W)
1
δ = 0.5
0.2
10^{−1 0.1}
0.05
0.02
10^−2
Single Shot
03nc00
P
δ = ^tp
T
10^−3
10^−6
10^−5
10^−4
10^−3
10^−2
t_p
t
T
10^−1
1
t_p (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V_(BR)DSS
drain-source
breakdown voltage
V_GS(th)
gate-source threshold
voltage
I_DSS
drain leakage current
I_GSS
gate leakage current
Conditions
I_D = 0.25 mA; V_GS = 0 V; T_j = 25 °C
I_D = 0.25 mA; V_GS = 0 V; T_j = -55 °C
I_D = 1 mA; V_DS = V_GS; T_j = 175 °C;
see Figure 11
I_D = 1 mA; V_DS = V_GS; T_j = -55 °C;
see Figure 11
I_D = 1 mA; V_DS = V_GS; T_j = 25 °C;
see Figure 11
V_DS = 55 V; V_GS = 0 V; T_j = 25 °C
V_DS = 55 V; V_GS = 0 V; T_j = 175 °C
V_GS = 20 V; V_DS = 0 V; T_j = 25 °C
V_GS = -20 V; V_DS = 0 V; T_j = 25 °C
Min Typ Max Unit
55 -
-
V
50 -
-
V
1
-
-
V
-
-
4.4 V
2
3
4
V
-
0.05 10 µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
BUK7516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
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