English
Language : 

BUK7516-55A_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
◁
NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C;
resistance
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
Dynamic characteristics
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 14
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
from contact screw on mounting base to
centre of die ; Tj = 25 °C
from drain lead 6 mm from package to
centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
-
32
mΩ
-
13
16
mΩ
-
1580 2245 pF
-
370 423 pF
-
220 312 pF
-
16
-
ns
-
70 -
ns
-
57
-
ns
-
41 -
ns
-
3.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
48
-
ns
-
106 -
nC
250
ID
(A)
200
150
100
50
0
0
VGS (V) = 20
03na36
10
9
8
7
6
5
2
4
6
8
10
VDS (V)
RDSon 40
(mΩ) 35
03na34
30
25
20
15
10
5
0
4 6 8 10 12 14 16 18 20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
BUK7516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 13
 ▷