BUK7516-55A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
30
g_fs
(S)
20
03na35
10
0
0
20
40
60
80
100
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
100
I_D
(A)
80
03na31
60
Fig 8. Forward transconductance as a function of
drain current; typical values
10
V_GS
(V)
8
6
V_DD = 14 V
03na33
V_DD = 44 V
40
4
20
0
0
T_j = 175 °C
2
4
T_j = 25 °C
6
8
10
V_GS (V)
2
0
0
20
40
60
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
BUK7516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
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