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| BUK7516-55A_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
Table 4. Limiting values â¦continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
ISM
Parameter
peak source current
Conditions
pulsed; tp ⤠10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 49 A; Vsup ⤠55 V; RGS = 50 â¦;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Min Max Unit
-
263 A
-
120 mJ
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
03na19
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
RDSon = VDS / ID
10 P
tp
δ=
T
tp
t
T
1
1
D.C.
10
03nc01
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 26 January 2011
© NXP B.V. 2011. All rights reserved.
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