BUK7516-55A_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78A (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUK7516-55A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
Parameter
drain-source voltage
drain-gate voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 3
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_mb = 25 °C
Min Max Unit
-
55 V
-
55 V
-20 20 V
-
65.7 A
-
46.5 A
-
263 A
-
138 W
-55 175 °C
-55 175 °C
-
65.7 A
BUK7516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
2 of 13