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| BFU768F_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
1)PLQ
G%
DDD
,& P$
VCE = 2 V; Tamb = 25 ï°C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
Fig 8. Minimum noise figure as a function of
collector current; typical values
1.0
NFmin
(dB)
0.8
001aam871
0.6
0.4
0.2
0
0
2
4
6
8
10
f (GHz)
IC = 12 mA; VCE = 2 V; Tamb = 25 ï°C.
Fig 9. Minimum noise figure as a function of
frequency; typical values
BFU768F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.2 â 24 December 2012
© NXP B.V. 2012. All rights reserved.
7 of 12
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