BFU768F_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Wi-Fi LNA applications circuits; I_C = 10.8 mA; V_CE = 2.1 V; T_amb = 25 C; unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V_CBO
V_CEO
V_EBO
I_C
h_FE
s₂₁²
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
DC current gain
insertion power gain
open emitter
open base
open collector
I_C = 10 mA; V_CE = 2 V;
T_j = 25 C
f = 2.4 GHz
f = 5.0 GHz
--
10 V
--
2.8 V
--
1.0 V
--
70 mA
155 330 505
- 13.1 -
dB
- 12.2 -
dB
f = 5.9 GHz
- 11.1 -
dB
NF
noise figure
f = 2.4 GHz
- 1.1 -
dB
f = 5.0 GHz
- 1.1 -
dB
f = 5.9 GHz
- 1.2 -
dB
IP3
third-order intercept
f = 2.4 GHz
point
f = 5.0 GHz
- 15.7 -
- 18.8 -
dBm
dBm
f = 5.9 GHz
- 18.8 -
dBm
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU768F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU768F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.2 — 24 December 2012
© NXP B.V. 2012. All rights reserved.
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