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BFU768F_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor
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NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
250
CCBS
(fF)
200
001aam865
50
fT
(GHz)
40
001aam866
150
30
100
20
50
10
0
0
1
2
3
4
VCB (V)
Fig 4.
f = 1 MHz, Tamb = 25 C.
Collector-base capacitance as a function of
collector-base voltage; typical values
40
G
(dB)
30
001aam868
MSG
20
IS21I2
10
Gp(max)
0
0
20
40
60
80
IC (mA)
Fig 5.
VCE = 1 V; f = 2 GHz; Tamb = 25 C.
Transition frequency as a function of collector
current; typical values
40
G
(dB)
30
MSG
001aam869
20
Gp(max)
IS21I2
10
0
0
2
4
6
8
10
f (GHz)
0
0
2
4
6
8
10
f (GHz)
VCE = 1 V; IC = 8 mA; Tamb = 25 C.
VCE = 1 V; IC = 50 mA; Tamb = 25 C.
Fig 6. Gain as a function of frequency; typical values Fig 7. Gain as a function of frequency; typical values
BFU768F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.2 — 24 December 2012
© NXP B.V. 2012. All rights reserved.
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